| PART |
Description |
Maker |
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10 |
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Siemens Semiconductor Group
SIEMENS AG
|
| M366S3323DTS M366S3323DTS-C1H M366S3323DTS-C1L M36 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung semiconductor
Samsung Electronic
|
| K4S280432I-TL750 |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| HYM71V633201TH-75 |
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块）
|
International Business Machines, Corp.
|
| TC59SM704FTL-10 TC59SM708FTL-10 |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
|
| EM6AB160TSA-5G EM6AB160TSA |
32M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| EM68B16CWPA EM68B16CWPA-25H EM68B16CWPA-3H |
32M x 16 bit DDRII Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
